MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 10 pot
MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 10 pot
... 32, pp. 5 7-6 3 (1989). [l5] R. Gharabagi and A. El-Nokali, ‘A charge-based model for short-channel MOS transistor capacitances’, IEEE Trans. Electron Devices, ED-37, pp. 106 4-1 072 (1990). ... conservative MOSFET model’, IEEE Trans. Computer-Aided Design, CAD-7, [14] R. Gharabagi and A. El-Nokali, ‘A model for the intrinsic gate capacitances of short-channel MOSFETYs’,...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 8 potx
... =QV 1 5 10. 5 v) n - 5 1 0-6 3 0 1 0-7 z a 1 0-8 n > [r 1 0-9 1 0-1 0 0.0 1 .o 2.0 3.0 4.0 5.0 GATE VOLTAGE Vgs (V) Fig. 6.17 Device I,, - V,, characteristics in ... form that at first glance appears different. 6.7 Short-Geometry Models 3 - 2- - a 9- W- (7 5 9 1.75 Q t- 6 !I 3 t- 6 fJY 0.5 293 I = 1....
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 9 potx
... 308 3 .O 6 MOSFET DC Model I I 1 I I I pMOST toX = 105 A W,/L, = 10l0.5 v,, = -4 v h c E 4 v U I 1 .o I - -2 v 0.01 -1 - - 7- -1 - - i - I * " ... 6 MOSFET DC Model GATE SAT U R AT 10 N 4 DRAIN 1 L - - - - - - - - - - - D C 0 WY' L 4J-4 Fig. 6...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 14 potx
... Optimizer 53 1 lo-' 1 0-2 1 0-3 9 lo4 I 0-5 1 0-6 1 lo-' 1 0-2 1 0-3 9 lo4 I 0-5 1 0-6 1 0-7 10& quot; 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 11 Fig. 10. 7 DIBL parameter ... interior of a hyper-ellipsoid in n-dimensional space and p = u produces hypersurfaces of constant probability density. Therefore, if (P - Pt)’C- ’(P...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 3 docx
... + + pMOST - - - + terminal voltages as drain-source voltage Vds( = V, - VJ, gate-source voltage V,,( = V, - V,), and bulk-source voltage vb,( = vb - Vs). For normal DC ... 2 Basic Semiconductor and pn Junction Theory The variables F,,F, and F3 are F, =- *bi [l -( 1 - F,)&apos ;-& quot;] (1 -4 F2 = (1 - F,...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 4 doc
... PC 10 60 Rpmz Xj to, RS, 30 60 R Rco 18 78 R R," 17 52 R 0.35 y 0.25 50 50 110 3 MOS Transistor Structure and Operation ~i 1; L 6i! - - - - - - - - - Fig. ... order expression for Rsp, based on the assumption of uniform doping 128 4 MOS Capacitor I- -t > O O+ -0 .6 1 A1 (p-Si n+ Po~y(p-si) -o-...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 5 ppsx
... df Qh Y <h VTO nMOST p-type - +- +++ pMOST n-type - -+ - (for metals and n+ polysilicon gate) - - (for metals and n+ polysilicon gate) + (for p+ polysilicon gate) (tax ... (4.15) that (Ei - Ef) I64 4 MOS Capacitor N~ = 3.3 to,=300 A n' POLY-Si GATE p-SUBSTRATE -0 .7 t 0 DATA - MODEL (4.80) Eq. (4...
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MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 6 pptx
... >" ;- I 5 0.4 lY I bO.3 195 1'1'1'1'1~1'1'1~ I - Nb = 2 X 10& apos;"cm-3 - - - - - W=20 m - f"\L "A&ING - I I 1 ... (a) - - - 16 -3 A Nb=1.71 x 10 cm x Nb = 1.5 6 x 1Ol6c m3 N 4-2 5 x 1 0'6cm-3 0. 3- 2 6 10 I& I8 2 WIDTH (p...
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