Electronic Materials Part 4 pdf

... 3.225 4 Energy Gap and Mobility Trends Material GaN AlAs GaP GaAs InP InAs InSb Eg(eV)°K 3.39 2.3 2 .4 1.53 1 .41 0 .43 0.23 µn(cm 2 /V·s) 150 180 2,100 16,000 44 ,000 120,000 ... (eV) a o A 6 / 10 3.56 / 3.16 1685 / 1770 1.1 / 3 5 .42 / 5 .46 1231 / 1510 / ? 0.72 / 1.35/ ? 5.66 / 5.65 / ? 508 / 798 / ? 0.08 /0.18 / 1 .45 6 .45 / 6.09 / ? IV / III-V / II-VI* ∗ Fi...

Ngày tải lên: 10/08/2014, 11:22

... transmittance, % . 200 o C 40 0 o C 600 o C 700 o C 800 o C 900 o C 1000 o C 1100 o C 1200 o C 1300 o C 140 0 o C T к 70 46 78 58 88 74 74 75 90 74 86 76 74 80 48 54 60 66 84 84 85 84 84 74 90 o IR-beam sample a) ... Silicon Carbide – Materials, Processing and Applications in Electronic Devices 90 500 700 900 1100 Wave number, cm -1 70 46 57 54 75 53 64...

Ngày tải lên: 19/06/2014, 11:20

... however, showed a Silicon Carbide – Materials, Processing and Applications in Electronic Devices 3 24 3 .40 3 .42 3 .44 3 .46 3 .48 3.50 3.52 3. 54 3.56 3.58 3.60 3.62 1600 1700 1800 1900 2000 2100 2200 Density, ... SiC(micro) /30 Si 3 N 4 (micro) 145 0- 1880 145 0 /small cracks 3.02 94 243 58 0.16 - 1880 1510 4. 6 100 Si 3 N 4 (micro) 890- 1880 * 145 0 (ρ...

Ngày tải lên: 19/06/2014, 11:20

... each fracture critical part to identify sensitive components.” Appendix Section 4. 7 .4  “it is recommended that vibratory or high cycle stress be restricted to a value of 40 % of that allowed by ... are based on experience and may have little applicability to newer designs, materials, or operating conditions. In particular, one can note that the guidelines proposed in the original E...

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