Engineering Materials and Processes phần 1 doc

... Engineering Materials and Processes Dedicated to our ever patient, supportive and loving wives, Madeline, Katherine and Betty 1 Introduction 1. 1 Silver Metallization ... ………………………….…………… … 10 4 6.3.3 Results and Discussions ……………………………………… 10 5 6.3.4 Conclusions ………………………………………………….… 10 9 6.4 References …………………………………………………………… 11 0 7 Su...

Ngày tải lên: 08/08/2014, 17:20

... down to about 1x10 10 Torr. During annealing the vacuum in the furnace was about 1 x10 –8 Torr. Sheet resistances of the TaN/Si and Ag/TaN/Si structures were measured, both before and after ... lowest resistance (R cond ) and it is also the thickest layer. Therefore, 1/ R cond » 1/ R passivation (R passivation , resistance of encapsulation) and 1/ R total ~1/ R cond o...

Ngày tải lên: 08/08/2014, 17:20

... [16 ] 25 20 15 10 5 0 0.0 5.0x10 3 1. 0x10 4 1. 5x10 4 2.0x10 4 Si Ag Al O P - P Height Sputter Time (min) P-P Hei g ht ( Arb. Units ) 30 25 20 15 10 5 0 0.0 5.0x10 3 1. 0x10 4 1. 5x10 4 2.0x10 4 Si Ag Al O O P ... Moghadam, and T. L. Alford, Thin Solid Films 262, 15 4 (19 95). [10 ] 19 98 Annual Book of ASTM Standards, edited by R. A. Storer (ASTM, Philadelphia), Vol. 6. 0...

Ngày tải lên: 08/08/2014, 17:20

... Electrochem. Soc. 13 3 12 43 (19 86). [8] T. E. Graedel, J. Electrochem. Soc. 13 9(7), 19 63 (19 92). [9] B. Chalmers, R. King, R. Shuttleworth, Proc. R. Soc. A 19 3, 465 (19 48). [10 ] A. E. B. Presland, G. L. ... of the projectile energies for M 1 < M 2 is given by: 2 1 222 2 12 1 1 o 21 E(MMsin)Mcos K EMM ⎡⎤ −ϑ+ϑ ⎢⎥ == ⎢⎥ + ⎢⎥ ⎣⎦ (2 .1) The energy ratio K = E 1...

Ngày tải lên: 08/08/2014, 17:20

... Standard (JCPDS ICDD cards #: 25 -12 80, 26-0985, 32 -12 82, 25 -12 78, 14 -04 71, 31- 1370, & 32 -12 83), PDF Database, 19 94. [18 ] G. S. Chen, and T. S. Chen, J. Appl. Phys. 87, 8473(2000). [19 ] ... spectra show prominent Ag {11 1} and the TaN peaks identified in Figure 3 .10 . The intensity of the Ag {11 1} peak increases for the 600°C anneal. This implies that < ;11...

Ngày tải lên: 08/08/2014, 17:20

... X-ray diffraction pattern of Ag on Pa-n. Ag film shows prominent (11 1) peak. The intensity of (11 1) peak increases up to 300°C and then suddenly decreases for 350°C. X-ray diffraction does not ... Pa-n completely. Formation of single and double bonds between carbon and oxygen [11 ] during plasma treatment may have helped increase adhesion between Ag and Pa-n. 4.3.5 Conclusions...

Ngày tải lên: 08/08/2014, 17:20

... A′ 11 .0 11 13 voids B′ 7.0 4–5 voids C′ 9.0 8–9 voids D′ 10 .0 8–9 voids 6 Integration Issues 6 .1 Factors Influencing the Kinetics in Silver- luminum Bilayer Systems 6 .1. 1 Introduction ... on SiO 2 before and after annealing at 600°C in an NH 3 ambient for 12 0 minutes. Only the surface peaks and positions are shown [8]. 30 40 50 60 70 80 90 0 2 4 6 8 10 12...

Ngày tải lên: 08/08/2014, 17:20

... bilayer and E a = 0.34±0.05 eV for the Ag (200 nm)/Al(30 nm) bilayers and represents the energy barrier of the limiting step in the surface oxide formation process. 1. 1 1. 2 1. 3 1. 4 1. 5 0 1 2 3 4 5 6 7 8 ... Integration Issues 89 30 40 50 60 70 80 90 6 7 8 9 10 11 12 13 14 Ag(200nm)/Al(30nm) on SiO 2 400 o C 500 o C 600 o C Thickness (nm) time 1/ 2 (s 1/ 2 )...

Ngày tải lên: 08/08/2014, 17:20

... Integration Issues 11 1 [18 ] Y. Zeng, Y. L. Zou, T. L. Alford, S. S. Lau, F. Deng, T. Laursen and B. M. Ullrich, J. Appl. Phys. 81, 7773 (19 97). [19 ] B. A. Julies, D. Knoesen, R. ... Press, Cambridge, UK, 19 87). [15 ] K. Sieradzki, K. Baily, and T. L. Alford, Appl. Phys. Lett. 79, 34 01 (20 01) . [16 ] M. M. Mitan, T. L. Alford, Thin Solid Films 434, 258 (2003). [17 ] T...

Ngày tải lên: 08/08/2014, 17:20