Lumped Elements for RF and Microwave Circuits phần 5 pot

... Capacitors for RF and Microwave Applications,’’ IEEE Microwave Wireless Components Lett., Vol. 12, January 2002, pp. 3 5. 188 Lumped Elements for RF and Microwave Circuits Table 5. 5 ABCD-, S-, Y-, and ... j ␻ L 12 ͬͫ i 1 −i 2 ͬ (6.8) 192 Lumped Elements for RF and Microwave Circuits C e = P 3 .5 × 10 − 5 pF/ ␮ m ( 75- ␮ m substrate) (6.3) = P 5...

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... 1. 75 7. 75 1. 25 4. 75 R dc (⍀) 3. 45 3.32 5. 28 5. 21 Q max LC 4.43 25. 7 3 .50 10.3 @ f (GHz) 2. 05 13.7 1. 45 6.80 f res (GHz) 10.1 14.0 6. 65 11.38 Diameter ( ␮ m) 300 300 3 65 3 65 70 Lumped Elements for ... Y ′ 13 (2.29) and Figure 2.10 Pi EC representation of the inductor. 52 Lumped Elements for RF and Microwave Circuits Table 2 .5 ABCD, S-Parameter...

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... single via, h = 25 mil; (c) double via, h = 15 mil; and (d) double via, h = 25 mil. (From: [20].  1992 IEEE. Reprinted with permission.) 252 Lumped Elements for RF and Microwave Circuits [17] IE3D, ... 12 ␮ m Finger thickness, t 55 55 ␮ m Number of fingers, N 20 20 20 20 ␮ m Substrate thickness, h 1 25 1 25 1 25 1 25 ␮ m Capacitance, C 0.126 0. 252 0.4 05 0 .52 7 p...

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... 250 760 0.8682 0.144 Si 11.7 0. 154 0 100 75 0.126 0.992 GaAs 12.9 0.0010 75 50 0.08 65 1.4 45 Al 2 O 3 9.8 0.0002 250 2 35 0.027 4.630 BeO 6.4 0.0003 250 352 0.00237 52 .774 Gold conductors are 4 .5 ␮ m ... Lumped Elements for RF and Microwave Circuits [14] Sturdivant, R., and T. Theisen, ‘‘Heat Dissipating Transmission Lines,’’ Applied Microwave and Wireless, Vol....

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... 4 .5 4 .5 3 7 180 3.5I1T 3 .5 12 14 108 24 4 .5 9.0 3 7 360 3.5I5S 3 .5 8 8 50 8 0.6 4 .5 0 3 16 3.5I5A 3 .5 8 8 50 8 1 .5 4 .5 0 3 40 3.5I5B 3 .5 8 8 50 16 1 .5 4 .5 0 3 80 3.5I5M 3 .5 8 8 50 8 4 .5 4 .5 3 ... 16 4 .5 4 .5 3 7 240 2.5I1T 2 .5 16 10 108 32 4 .5 9.0 3 7 480 3.5I1S 3 .5 12 14 108 12 0.6 4 .5 0 3 24 3.5I1A 3 .5 12 14 108 12 1 .5 4 .5 0 3 60 3.5I1B 3 ....

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... C s = 0.06 pF, and SRF = 32.49 GHz. 176 Lumped Elements for RF and Microwave Circuits 5. 4.2 Flat-Mounted Series Capacitor Another series connection is shown in Figure 5. 10(a) and for a lossless ... 16.0 16 1.290, 50 .8 1.331, 52 .4 0.0 152 22.0 14 1.628, 64.1 1.674, 65. 9 0.0086 32.0 12 2. 052 , 80.8 2.101, 82.7 0.0 055 41.0 10 2 .58 8, 101.9 2.639, 103.9 0.00 35 55...

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... (a) capacitance for airbridge, (b) capacitance for crossover, and (c) inductance for crossover. 292 Lumped Elements for RF and Microwave Circuits Figure 9.13 Via hole fence: (a) cross-sectional view and ... 88–99. 312 Lumped Elements for RF and Microwave Circuits Figure 10.10 Calculated capacitance per unit length of a multilayer GaAs microstrip for var...

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... 1973, pp. 450 – 457 . [26] Djordjevic, A., et al., Matrix Parameters for Multiconductor Transmission Lines, Norwood, MA: Artech House, 1989. 358 Lumped Elements for RF and Microwave Circuits impedance), ... switch and conventional series/shunt FET T/R switches where I dss = 0.2 A/mm, V p =−1V, and Q L = 0.44. 366 Lumped Elements for RF and Microwave Circuits...

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... 0.009 0.038 750 1.97 50 .2 3.31 0. 057 0.012 0.030 1,000 2.62 42.0 3.41 0. 054 0.0 15 0.026 1 ,50 0 3.94 31.8 3 .55 0. 052 0.020 0.020 2,000 5. 25 25. 7 3. 65 0. 051 0.0 25 0.016 Here, Q c , Q d , and Q r are ... 0.064 150 0.39 86.4 4.37 0.112 0.008 0.060 200 0 .52 78.0 4. 45 0.099 0.009 0. 055 250 0.66 71 .5 4 .52 0.091 0.010 0. 051 300 0.79 66.2 4 .58 0.0 85 0.011 0.047 400...

Ngày tải lên: 08/08/2014, 01:21